Donald A. Gajewski

According to our database, Donald A. Gajewski authored at least 10 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs.

Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

GaN HEMTs Design and Modeling for 5G.

Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori

Proceedings of the IEEE International Reliability Physics Symposium, 2023

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.

In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.

Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).

Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Challenges and Peculiarities in Developing New Standards for SiC.

Don A. Gajewski

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression.

Bruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies.

Donald A. Gajewski, Satyaki Ganguly, Scott T. Sheppard, Simon Wood, Jeff B. Barner, Jim W. Milligan, John Palmour

Microelectron. Reliab., 2018

Reliability studies of SiC vertical power MOSFETs.

Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014

Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET.

Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker

Microelectron. Reliab., 2014