Dominique Golanski

According to our database, Dominique Golanski authored at least 9 papers between 2013 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs.

Denis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, Hélène Wehbe-Alause

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

A self-sustaining Single Photon Avalanche Diode Model.

Sven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, Bruce Rae

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Statistical measurements and Monte-Carlo simulations of DCR in SPADs.

Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study.

Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices.

Rémi Helleboid, Denis Rideau, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Jérémy Grebot, Antonin Zimmerman, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2018

Integration of SPAD in 28nm FDSOI CMOS technology.

Tulio Chaves de Albuquerque, Françis Calmon, Raphael Clerc, Patrick Pittet, Younes Benhammou, Dominique Golanski, Sebastien Jouan, Denis Rideau, Andreia Cathelin

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2015

EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region.

Antoine Litty, Sylvie Ortolland, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications.

Antoine Litty, Sylvie Ortolland, Dominique Golanski, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Improved modeling of isolated EDMOS in advanced CMOS technologies.

Antoine Litty, Sylvie Ortolland, Sorin Cristoloveanu, Helene Beckrich Ros, Dominique Golanski

Proceedings of 2013 International Conference on IC Design & Technology, 2013