Dohui Kim

According to our database, Dohui Kim authored at least 2 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm² at 0.60V for Auto-G1 Applications.

Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm² at 0.85V.

Hyunjin Shin, Sangkyung Won, Dohui Kim, Byunghun Choi, Gyusung Kim, Myeonghee Oh, Jaeseung Choi, Jongwook Kye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022