Dina H. Triyoso

According to our database, Dina H. Triyoso authored at least 8 papers between 2012 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs.

U. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso, M. W. Stoker, Jeffrey B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, Evgeny Kaganer

Proceedings of the Device Research Conference, 2019

2017

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

La-doped ZrO2 based BEoL decoupling capacitors.

Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Maximilian Drescher, A. Gummenscheimer, Mark G. Nolan, L. Cheng, D. H. Triyoso

Proceedings of the International Conference on IC Design and Technology, 2016

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges.

D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen

Proceedings of the International Conference on IC Design and Technology, 2016

2014

ALD ZrO2 processes for BEoL device applications.

Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Stefan Riedel, Lutz Wilde, Dina H. Triyoso, Mark G. Nolan

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM.

D. H. Triyoso, Wenke Weinreich, Konrad Seidel, Mark G. Nolan, Patrick Polakowski, D. Utess, Susanne Ohsiek, K. Dittmar, M. Weisheit, M. Licbau, R. Fox

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013

Impact of precursors choice on characteristics of PEALD SiN for spacer applications.

Dina H. Triyoso, Klaus Hempel, Susanne Ohsiek, Jeff Shu, Jamie K. Schaeffer, Markus Lenski

Proceedings of 2013 International Conference on IC Design & Technology, 2013

2012

Robust PEALD SiN spacer for gate first high-k metal gate integration.

D. H. Triyoso, V. Jaschke, Jeff Shu, S. Mutas, Klaus Hempel, Jamie K. Schaeffer, Markus Lenski

Proceedings of the IEEE International Conference on IC Design & Technology, 2012