Dennis R. Ball

According to our database1, Dennis R. Ball authored at least 11 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply Voltages.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.
Proceedings of the Device Research Conference, 2023

2022
Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Single-Event Latchup Vulnerability at the 7-nm FinFET Node.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
High-Current State triggered by Operating-Frequency Change.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2015
Multi-cell soft errors at the 16-nm FinFET technology node.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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