Denis Rideau

According to our database, Denis Rideau authored at least 13 papers between 2005 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs.

Denis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, Hélène Wehbe-Alause

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models.

Dorian Saint-Pierre, Raphaël Clerc, Rémi Helleboid, Denis Rideau

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

A self-sustaining Single Photon Avalanche Diode Model.

Sven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, Bruce Rae

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Statistical measurements and Monte-Carlo simulations of DCR in SPADs.

Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study.

Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices.

Rémi Helleboid, Denis Rideau, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Jérémy Grebot, Antonin Zimmerman, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Semi-Empirical model for optical properties of Si_1-xGe_x alloys accounting for strain and temperature.

Jérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2018

Integration of SPAD in 28nm FDSOI CMOS technology.

Tulio Chaves de Albuquerque, Françis Calmon, Raphael Clerc, Patrick Pittet, Younes Benhammou, Dominique Golanski, Sebastien Jouan, Denis Rideau, Andreia Cathelin

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2016

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD.

Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.

Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord

Proceedings of the 44th European Solid State Device Research Conference, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Microscopic scale characterization and modeling of transistor degradation under HC stress.

Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix

Microelectron. Reliab., 2012

2005

Characterization and Modeling of Gate-Induced-Drain-Leakage.

Fabien Gilibert, Denis Rideau, Alexandre Dray, Francois Agut, Michel Minondo, Andre Juge, Pascal Masson, Rachid Bouchakour

IEICE Trans. Electron., 2005