Davide Bisi

According to our database, Davide Bisi authored at least 11 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.

Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Short-Circuit Capability with GaN HEMTs : Invited.

Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni

Microelectron. Reliab., 2016

2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.

Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Proton induced trapping effect on space compatible GaN HEMTs.

Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni

Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.

Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.

Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Field plate related reliability improvements in GaN-on-Si HEMTs.

Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2012