David Trémouilles
Orcid: 0000-0001-8446-9129
According to our database1,
David Trémouilles
authored at least 21 papers
between 2001 and 2018.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2018
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance.
Microelectron. Reliab., 2018
2017
Microelectron. Reliab., 2017
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.
Microelectron. Reliab., 2017
2015
Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology.
Microelectron. Reliab., 2015
2014
2013
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation.
Microelectron. Reliab., 2013
2012
IEEE Trans. Instrum. Meas., 2012
2009
Microelectron. Reliab., 2009
Microelectron. Reliab., 2009
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD).
Microelectron. Reliab., 2009
2007
Microelectron. Reliab., 2007
2005
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectron. Reliab., 2005
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005
2004
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications.
Microelectron. Reliab., 2004
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency.
IEEE J. Solid State Circuits, 2004
2003
Microelectron. Reliab., 2003
Microelectron. Reliab., 2003
Microelectron. Reliab., 2003
2001
Microelectron. Reliab., 2001
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.
IEEE J. Solid State Circuits, 2001