David Roy

According to our database, David Roy authored at least 29 papers between 2001 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Non-conducting Hot carrier temperature activation and temperature sense effect.

X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2024

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles.

A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Characterization and modeling of DCR and DCR drift variability in SPADs.

Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Françis Calmon

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Insight Into HCI Reliability on I/O Nitrided Devices.

C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Hot-Carrier Degradation modeling of DCR drift in SPADs.

Mathieu Sicre, David Roy, Françis Calmon

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Statistical measurements and Monte-Carlo simulations of DCR in SPADs.

Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.

Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study.

Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.

A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Process Optimization for HCI Improvement in I/O Analog Devices.

Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges.

D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy

Microelectron. Reliab., 2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology.

Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2017

2015

Physically-based extraction methodology for accurate MOSFET degradation assessment.

Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2012

Microscopic scale characterization and modeling of transistor degradation under HC stress.

Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix

Microelectron. Reliab., 2012

Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.

Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo

IEEE J. Solid State Circuits, 2012

2008

Will BiCMOS stay competitive for mmW applications ?

Patrice Garcia, Alain Chantre, Sébastien Pruvost, Pascal Chevalier, Sean T. Nicolson, David Roy, Sorin P. Voinigescu, Christophe Garnier

Proceedings of the IEEE 2008 Custom Integrated Circuits Conference, 2008

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

2005

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.

G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

Multi-vibrational hydrogen release: Physical origin of T_bd, Q_bd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.

G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2005

2003

New insights into the change of voltage acceleration and temperature activation of oxide breakdown.

G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard

Microelectron. Reliab., 2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.

Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2003

2002

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.

David Roy, S. Bruyère, E. Vincent, Frederic Monsieur

Microelectron. Reliab., 2002

Gate oxide Reliability assessment optimization.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2002

Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC).

Thierry Devoivre, M. Lunenborg, C. Julien, J.-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P.-J. Goirand, R. Palla, I. Thomas, F. Guyader, David Roy, B. Borot, Nicolas Planes, Sylvie Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond

Proceedings of the 10th IEEE International Workshop on Memory Technology, 2002

2001

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.

Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo

Microelectron. Reliab., 2001

Body effect induced wear-out acceleration in ultra-thin oxides.

Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?

S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo

Microelectron. Reliab., 2001