David R. Greenberg

According to our database, David R. Greenberg authored at least 4 papers between 1995 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2005

Scaling of SiGe Heterojunction Bipolar Transistors.

Jae-Sung Rieh, David R. Greenberg, Andreas Stricker, Greg G. Freeman

Proc. IEEE, 2005

2004

RFCMOS technology from 0.25μm to 65nm: the state of the art.

John J. Pekarik, David R. Greenberg, Basanth Jagannathan, Robert A. Groves, J. R. Jones, Raminderpal Singh, Anil Chinthakindi, Xudong Wang, Matthew J. Breitwisch, Douglas D. Coolbaugh, Peter E. Cottrell, John E. Florkey, Greg G. Freeman, R. Krishnasamy

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004

2003

Foundation of rf CMOS and SiGe BiCMOS technologies.

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson

IBM J. Res. Dev., 2003

1995

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor.

David R. Greenberg

PhD thesis, 1995