David Fanning

According to our database, David Fanning authored at least 4 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz.

F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper

Proceedings of the Device Research Conference, 2023

Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process.

David Fanning, Andrea L. Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, F. Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos, Harris Moyer, Andy Fu, John Carlson, Shyam Bharadwaj

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications.

Dan Denninghoff, F. Erdem Arkun, Jeong-Sun Moon, Haidang Tran, Andrea L. Corrion, Georges Siddiqi, David Fanning, Micha Fireman, J. Tai, Joel Wong, Bob Grabar, C. Dao, Ivan Milosavljevic, Ryan Tran, Ariel Getter, Andrew Clapper, S. Dadafshar, J. Georgieva, H. Moyer, Nicholas C. Miller, Michael Elliott, Ryan Gilbert

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2020

RF Performance of GaN-Based Graded-Channel HEMTs.

Nivedhita Venkatesan, Jeong-Sun Moon, Joel Wong, Bob Grabar, Michael Antcliffe, Peter Chen, Erdum Arkun, Isaac Khalaf, David Fanning, Patrick Fay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020