David C. Sheridan

According to our database, David C. Sheridan authored at least 3 papers between 2003 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field.

Elisa Platania, Zhiyang Chen, Filippo Chimento, Liqing Lu, Enrico Santi, Angelo Raciti, Jerry L. Hudgins, H. Alan Mantooth, David C. Sheridan, J. Cassady

Proceedings of the Industry Applications Society Annual Meeting, 2008

2004

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications.

Jeffrey B. Johnson, Alvin J. Joseph, David C. Sheridan, Ramana M. Maladi, Per-Olof Brandt, Jonas Persson, Jesper Andersson, Are Bjorneklett, Ulrika Persson, Fariborz Abasi, Lars Tilly

IEEE J. Solid State Circuits, 2004

2003

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies.

David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson

IBM J. Res. Dev., 2003