Danijel Dankovic

Orcid: 0000-0002-0214-2606

According to our database1, Danijel Dankovic authored at least 17 papers between 2002 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Online presence:

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Bibliography

2023
The Importance of Students' Practical Work in High Schools for Higher Education in Electronic Engineering.
IEEE Trans. Educ., April, 2023


2022
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.
J. Circuits Syst. Comput., December, 2022

2020
A smart data logger system based on sensor and Internet of Things technology as part of the smart faculty.
J. Ambient Intell. Smart Environ., 2020

2018
NBTI and irradiation related degradation mechanisms in power VDMOS transistors.
Microelectron. Reliab., 2018

A review of pulsed NBTI in P-channel power VDMOSFETs.
Microelectron. Reliab., 2018

2013
An Electromechanical Approach to a Printed Circuit Board Design Course.
IEEE Trans. Educ., 2013

2011
NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions.
Microelectron. Reliab., 2011

2010
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress.
Microelectron. Reliab., 2010

2009
Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs.
Microelectron. Reliab., 2009

2008
Negative bias temperature instability in n-channel power VDMOSFETs.
Microelectron. Reliab., 2008

Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs.
IET Circuits Devices Syst., 2008

2007
Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs.
Microelectron. Reliab., 2007

2006
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs.
Microelectron. Reliab., 2006

2005
Effects of electrical stressing in power VDMOSFETs.
Microelectron. Reliab., 2005

Negative bias temperature instability mechanisms in p-channel power VDMOSFETs.
Microelectron. Reliab., 2005

2002
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs.
Microelectron. Reliab., 2002


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