Daniel M. Fleetwood

According to our database, Daniel M. Fleetwood authored at least 20 papers between 2002 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Charge Trapping in Irradiated 3D Devices and ICs (Invited).

En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood

Proceedings of the IEEE International Reliability Physics Symposium, 2024

The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs.

Delgermaa Nergui, Mozhgan Hosseinzadeh, Y. A. Mensah, Harrison P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.

Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck

Proceedings of the Device Research Conference, 2023

Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes.

Daniel M. Fleetwood

Proceedings of the Device Research Conference, 2023

2021

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.

Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019

Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling Implications.

Daniel M. Fleetwood

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

The effect of ionization and displacement damage on minority carrier lifetime.

Jianqun Yang, Xingji Li, Chaoming Liu, Daniel M. Fleetwood

Microelectron. Reliab., 2018

Border traps and bias-temperature instabilities in MOS devices.

Daniel M. Fleetwood

Microelectron. Reliab., 2018

2015

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.

A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, Aaron R. Arehart

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Total-ionizing-dose effects and reliability of carbon nanotube FET devices.

Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis

Microelectron. Reliab., 2014

2012

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.

Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li

Microelectron. Reliab., 2012

2011

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions.

Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides

Microelectron. Reliab., 2011

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.

R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné

Microelectron. Reliab., 2011

2009

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008

Total ionizing dose effects in shallow trench isolation oxides.

Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf

Microelectron. Reliab., 2008

2007

Hydrogen in MOSFETs - A primary agent of reliability issues.

Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Microelectron. Reliab., 2007

Effects of device aging on microelectronics radiation response and reliability.

Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides

Microelectron. Reliab., 2007

2004

Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics.

J. A. Felix, J. R. Schwank, Daniel M. Fleetwood, M. R. Shaneyfelt, Evgeni P. Gusev

Microelectron. Reliab., 2004

2002

Hydrogen-related reliability issues for advanced microelectronics.

Daniel M. Fleetwood

Microelectron. Reliab., 2002

Effects of hydrogen transport and reactions on microelectronics radiation response and reliability.

Daniel M. Fleetwood

Microelectron. Reliab., 2002