Daniel J. Lichtenwalner

According to our database, Daniel J. Lichtenwalner authored at least 11 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method.

Philipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae-Hyung Park, Suman Das, Sei-Hyung Ryu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress.

S. R. Stein, J. Kim, Suman Das, Daniel J. Lichtenwalner, Sei-Hyung Ryu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs.

Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.

In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations.

Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode.

Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.

Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Reliability studies of SiC vertical power MOSFETs.

Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity

Proceedings of the IEEE International Reliability Physics Symposium, 2018

The effects of radiation on the terrestrial operation of SiC MOSFETs.

Akin Akturk, James McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, Dave Grider, Richard Wilkins

Proceedings of the IEEE International Reliability Physics Symposium, 2018