Daniel B. Habersat

According to our database, Daniel B. Habersat authored at least 5 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

NUV-Enhanced 4H-SiC SACM APDs.

Jonathan Schuster, Michael A. Derenge, Jeremy L. Smith, Gregory A. Garrett, Daniel B. Habersat, Brenda VanMil, Dina M. Bower, Shahid Aslam, Tilak Hewagama, Michael Wraback, Anand V. Sampath

Proceedings of the Device Research Conference, 2024

2023

Dynamic On-State Resistance in SiC MOSFETs.

Ronald Green, Aivars J. Lelis, Damian Urciuoli, Erik Schroen, Daniel B. Habersat

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification.

Daniel B. Habersat, Aivars J. Lelis, Ronald Green

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs.

Daniel B. Habersat, Ronald Green, Aivars J. Lelis

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Measurement considerations for evaluating BTI effects in SiC MOSFETs.

Daniel B. Habersat, Aivars J. Lelis, Ronald Green

Microelectron. Reliab., 2018