Damien Zander

According to our database, Damien Zander authored at least 7 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

Model-based engineering for designing cyber-physical systems from product specifications.

Alexandre Parant, François Gellot, Damien Zander, Véronique Carré-Ménétrier, Alexandre Philippot

Comput. Ind., 2023

2007

Stress induced gate-drain leakage current in ultra-thin gate oxide.

Christian Petit, Damien Zander

Microelectron. Reliab., 2007

Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides.

Christian Petit, Damien Zander

Microelectron. Reliab., 2007

2005

Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides.

Damien Zander

Microelectron. Reliab., 2005

Low voltage SILC and P- and N-MOSFET gate oxide reliability.

Christian Petit, A. Meinertzhagen, Damien Zander, O. Simonetti, M. Fadlallah, T. Maurel

Microelectron. Reliab., 2005

2003

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.

Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit

Microelectron. Reliab., 2003

2001

High field stress at and above room temperature in 2.3 nm thick oxides.

Damien Zander, Christian Petit, F. Saigné, A. Meinertzhagen

Microelectron. Reliab., 2001