Daisuke Matsubayashi

According to our database, Daisuke Matsubayashi authored at least 2 papers between 2012 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

A 20ns-write 45ns-read and 10¹⁴-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors.

Shuhei Maeda, Satoru Ohshita, Kazuma Furutani, Yuto Yakubo, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda, Masahiro Fujita, Shunpei Yamazaki

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2012

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.

Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, Yutaka Okazaki, Toshinari Sasaki, Kousei Noda, Daisuke Matsubayashi, Takahiko Ishizu, Tatsuya Onuki, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Jun Koyama, Shunpei Yamazaki

IEEE J. Solid State Circuits, 2012