Daire Cott

According to our database, Daire Cott authored at least 6 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach.

Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.

Souvik Ghosh, Quentin Smets, S. Banerjee, Tom Schram, Koen Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.

L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs.

L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer

Proceedings of the Device Research Conference, 2022

2021

Graphene electro-absorption modulators integrated at wafer-scale in a CMOS fab.

Cheng Han Wu, Steven Brems, Didit Yudistira, Daire Cott, A. Milenin, Kevin Vandersmissen, A. Maestre, A. Centeno, Joris Van Campenhout, Cedric Huyghebaert, Marianna Pantouvaki

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation.

Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu

Proceedings of the Device Research Conference, 2021