Daewoong Kang

Orcid: 0000-0002-9853-4195

According to our database¹, Daewoong Kang authored at least 4 papers between 2022 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of five.

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Bibliography

2024

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash.

[BibT_eX]

[DOI]

IEEE Access, 2024

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash.

[BibT_eX]

[DOI]

IEEE Access, 2024

2023

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer.

[BibT_eX]

[DOI]

IEEE Access, 2023

2022

Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory.

[BibT_eX]

[DOI]

IEEE Access, 2022

Daewoong Kang

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