D. Tedesco

According to our database, D. Tedesco authored at least 5 papers between 2015 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2018

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Measure of high frequency input impedance to study the instability of power devices in short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.

Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2018

2017

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.

Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2017

2015

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.

Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi

Microelectron. Reliab., 2015