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D. Spassov

Orcid: 0000-0002-9299-7148

According to our database1, D. Spassov authored at least 6 papers between 2007 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

On csauthors.net:

Bibliography

2018
A review of pulsed NBTI in P-channel power VDMOSFETs.
[BibTeX]
[DOI]
Danijel Dankovic
,
Ivica Manic
,
Aneta Prijic
,
Vojkan Davidovic
,
Zoran Prijic
,
Snezana Golubovic
,
Snezana Djoric-Veljkovic
,
Albena Paskaleva
,
D. Spassov
,
Ninoslav Stojadinovic
Microelectron. Reliab., 2018

2014
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> stack.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
D. Spassov
,
Albena Paskaleva
,
Aleksandar Skeparovski
Microelectron. Reliab., 2014

2012
Doped Ta<sub>2</sub>O<sub>5</sub> and mixed HfO<sub>2</sub>-Ta<sub>2</sub>O<sub>5</sub> films for dynamic memories applications at the nanoscale.
[BibTeX]
[DOI]
Elena Atanassova
,
Albena Paskaleva
,
D. Spassov
Microelectron. Reliab., 2012

2011
Lightly Al-doped Ta<sub>2</sub>O<sub>5</sub>: Electrical properties and mechanisms of conductivity.
[BibTeX]
[DOI]
D. Spassov
,
Elena Atanassova
,
Albena Paskaleva
Microelectron. Reliab., 2011

2010
Constant current stress-induced leakage current in mixed HfO<sub>2</sub>-Ta<sub>2</sub>O<sub>5</sub> stacks.
[BibTeX]
[DOI]
Elena Atanassova
,
Nenad Novkovski
,
Albena Paskaleva
,
D. Spassov
Microelectron. Reliab., 2010

2007
Metal gates and gate-deposition-induced defects in Ta<sub>2</sub>O<sub>5</sub> stack capacitors.
[BibTeX]
[DOI]
Elena Atanassova
,
D. Spassov
,
Albena Paskaleva
Microelectron. Reliab., 2007


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