D. Nirmal

According to our database, D. Nirmal authored at least 16 papers between 2013 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone.

Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal

Microelectron. J., 2024

A Novel L_G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers.

B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal

IEEE Access, 2024

Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device.

Deepti Mongia, Subhash Chander, D. Nirmal

Proceedings of the 7th International Conference on Devices, Circuits and Systems, 2024

Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs.

S. Angen Franklin, Binola K. Jebalin, Subhash Chander, D. Nirmal

Proceedings of the 7th International Conference on Devices, Circuits and Systems, 2024

2023

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications.

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari

Microelectron. J., October, 2023

A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications.

J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A, D. Nirmal

Microelectron. J., October, 2023

A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications.

Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda

Microelectron. J., March, 2023

Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications.

Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal

Microelectron. J., 2023

2022

Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET.

D. Gracia, D. Nirmal, D. Jackuline Moni

Microelectron. J., 2022

Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review.

J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith

Microelectron. J., 2022

2021

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate.

D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh

Microelectron. J., 2021

Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study.

J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha

Microelectron. J., 2021

2019

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review.

J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A. S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar

Microelectron. J., 2019

2015

The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.

Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal

Microelectron. J., 2015

2013

Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics.

D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar

Microelectron. Reliab., 2013

Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric.

D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar

Int. J. Circuit Theory Appl., 2013