D. Burdeaux

According to our database, D. Burdeaux authored at least 2 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects.

B. Grote, B. Green, C. Gaw, Y. Wei, D. Hill, P. Renaud, J. Wan, C. Rampley, D. Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, H. Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, P. Hu

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2020

High Performance 150 mm RF GaN Technology with Low Memory Effects.

K. Moore, B. Green, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, J. Finder, K. Kim, C. Gaw, T. Arnold, F. Vanaverbeke, R. Embar, P. Rashev, M. Masood

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020