Clemens Ostermaier

According to our database, Clemens Ostermaier authored at least 5 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests.

D. Wieland, S. Ofner, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018

Review of bias-temperature instabilities at the III-N/dielectric interface.

Clemens Ostermaier, Peter Lagger, M. Reiner, Dionyz Pogany

Microelectron. Reliab., 2018

2015

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.

Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.

Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.

Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn

Microelectron. Reliab., 2012