Claudio Fiegna

According to our database, Claudio Fiegna authored at least 13 papers between 1990 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.

M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter.

Giuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.

Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.

Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka

Proceedings of the IEEE International Reliability Physics Symposium, 2019

TCAD predictions of hot-electron injection in p-type LDMOS transistors.

Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini

Proceedings of the 49th European Solid-State Device Research Conference, 2019

Characterization and Modeling of BTI in SiC MOSFETs.

Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

TCAD investigation on hot-electron injection in new-generation technologies.

Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2018

2017

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.

Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna

Microelectron. Reliab., 2017

2009

Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias.

Domagoj Siprak, Marc Tiebout, Nicola Zanolla, Peter Baumgartner, Claudio Fiegna

IEEE J. Solid State Circuits, 2009

2007

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs.

Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2000

The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study.

Claudio Fiegna

Proceedings of the IEEE International Symposium on Circuits and Systems, 2000

1990

Latch-up testing in CMOS IC's.

Roberto Menozzi, Massimo Lanzoni, Claudio Fiegna, Enrico Sangiorgi, Bruno Riccò

IEEE J. Solid State Circuits, August, 1990