Chunyu Peng
Orcid: 0000-0003-2408-5048Affiliations:
- Anhui University, Hefei, China
According to our database1,
Chunyu Peng
authored at least 60 papers
between 2015 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
High-Performance Latch Designs of Double-Node-Upset Self-Recovery and Triple-Node-Upset Tolerance for Aerospace Applications.
IEEE Trans. Aerosp. Electron. Syst., October, 2024
IEEE Trans. Circuits Syst. I Regul. Pap., September, 2024
IEEE Trans. Very Large Scale Integr. Syst., May, 2024
Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.
IEEE Trans. Very Large Scale Integr. Syst., April, 2024
Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations.
Microelectron. J., February, 2024
A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.
IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024
An 8b-Precison 16-Kb FDSOI 8T SRAM CIM macro based on time-domain for energy-efficient edge AI devices.
Microelectron. J., 2024
Microelectron. J., 2024
An 11-bit two-step column-shared ADC based on Flash/SS architecture for CMOS image sensor.
Microelectron. J., 2024
Microelectron. J., 2024
Microelectron. J., 2024
Microelectron. J., 2024
A 28-nm 9T SRAM-based CIM macro with capacitance weighting module and redundant array-assisted ADC.
Microelectron. J., 2024
A 9T-SRAM based computing-in-memory with redundant unit and digital operation for boolean logic and MAC.
Microelectron. J., 2024
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024
2023
Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.
Microelectron. J., November, 2023
A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store.
IEEE Trans. Very Large Scale Integr. Syst., June, 2023
IEEE J. Solid State Circuits, May, 2023
High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications.
IEEE Trans. Very Large Scale Integr. Syst., April, 2023
IEEE Trans. Circuits Syst. II Express Briefs, March, 2023
Microelectron. J., February, 2023
Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.
Microelectron. J., February, 2023
Write-enhanced and radiation-hardened SRAM for multi-node upset tolerance in space-radiation environments.
Int. J. Circuit Theory Appl., January, 2023
IEICE Electron. Express, 2023
MS3DAAM: Multi-scale 3-D Analytic Attention Module for Convolutional Neural Networks.
Proceedings of the Neural Information Processing - 30th International Conference, 2023
First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
2022
IEEE Trans. Very Large Scale Integr. Syst., 2022
IEEE Trans. Circuits Syst. II Express Briefs, 2022
Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point.
IEEE Trans. Circuits Syst. II Express Briefs, 2022
An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset.
Microelectron. J., 2022
IEICE Electron. Express, 2022
2021
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption.
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports.
IEEE J. Solid State Circuits, 2021
Cascade Current Mirror to Improve Linearity and Consistency in SRAM In-Memory Computing.
IEEE J. Solid State Circuits, 2021
2020
IEEE Trans. Very Large Scale Integr. Syst., 2020
IEEE Trans. Very Large Scale Integr. Syst., 2020
Multiple Sharing 7T1R Nonvolatile SRAM With an Improved Read/Write Margin and Reliable Restore Yield.
IEEE Trans. Very Large Scale Integr. Syst., 2020
IEEE Trans. Circuits Syst., 2020
IEICE Electron. Express, 2020
2019
Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application.
IEEE Trans. Very Large Scale Integr. Syst., 2019
Physical mechanism study of N-well doping effects on the single-event transient characteristic of PMOS.
IEICE Electron. Express, 2019
An inverter chain with parallel output nodes for eliminating single-event transient pulse.
IEICE Electron. Express, 2019
IEICE Electron. Express, 2019
IEICE Electron. Express, 2019
2018
IEEE Trans. Very Large Scale Integr. Syst., 2018
Offset voltage suppressed sense amplifier with self-adaptive distribution transformation technique.
IEICE Electron. Express, 2018
A dual-output hardening design of inverter chain for P-hit single-event transient pulse elimination.
IEICE Electron. Express, 2018
2017
A Pipeline Replica Bitline Technique for Suppressing Timing Variation of SRAM Sense Amplifiers in a 28-nm CMOS Process.
IEEE J. Solid State Circuits, 2017
2016
IEICE Electron. Express, 2016
IEICE Electron. Express, 2016
IEICE Electron. Express, 2016
2015
Multi-stage dual replica bit-line delay technique for process-variation-robust timing of low voltage SRAM sense amplifier.
Frontiers Inf. Technol. Electron. Eng., 2015
Neurocomputing, 2015
Erratum: A novel cascade control replica-bitline delay technique for reducing timing process-variation of SRAM sense amplifier [IEICE Electronics Express Vol 12 (2015) No 5 pp 20150102].
IEICE Electron. Express, 2015
A novel cascade control replica-bitline delay technique for reducing timing process-variation of SRAM sense amplifier.
IEICE Electron. Express, 2015
Proceedings of the 12th International Conference on Fuzzy Systems and Knowledge Discovery, 2015