Christoph Weimer

According to our database, Christoph Weimer authored at least 8 papers between 2020 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

On the Safe Operating Area of InP HBTs.

Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2.

Markus Müller, Christoph Weimer, Michael Schröter

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs.

Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs.

Christoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Thermal impedance of SiGe HBTs: Characterization and modeling.

Xiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs.

Christoph Weimer, Paulius Sakalas, Markus Müller, Gerhard G. Fischer, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs.

Markus Müller, Michael Schröter, Christoph Jungemann, Christoph Weimer

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020

Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K.

Xiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020