Christine Raynaud

According to our database, Christine Raynaud authored at least 6 papers between 2007 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2011

Comparison of 65nm LP bulk and LP PD-SOI with adaptive power gate body bias for an LDPC codec.

Julien Le Coz, Philippe Flatresse, Sylvain Engels, Alexandre Valentian, Marc Belleville, Christine Raynaud, Damien Croain, Pascal Urard

Proceedings of the IEEE International Solid-State Circuits Conference, 2011

A 6.7-ENOB, 500-MS/s, 5.1-mW dynamic pipeline ADC in 65-nm SOI CMOS.

Ray Nguyen, Christine Raynaud, Andreia Cathelin, Boris Murmann

Proceedings of the 37th European Solid-State Circuits Conference, 2011

2010

A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI.

Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent

IEEE J. Solid State Circuits, 2010

2009

A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI.

Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent

Proceedings of the 35th European Solid-State Circuits Conference, 2009

High voltage devices in advanced CMOS technologies.

Raúl Andrés Bianchi, Christine Raynaud, Floria Blanchet, Frederic Monsieur, Olivier Noblanc

Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2007

Design for millimeter-wave applications in silicon technologies.

Andreia Cathelin, Baudouin Martineau, N. Seller, S. Douyere, Jean Gorisse, Sébastien Pruvost, Christine Raynaud, Frederic Gianesello, Sébastien Montusclat, Sorin P. Voinigescu, Ali M. Niknejad, Didier Belot, Jean-Pierre Schoellkopf

Proceedings of the 33rd European Solid-State Circuits Conference, 2007