Christian Dua

According to our database, Christian Dua authored at least 12 papers between 2003 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes.

Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage

Microelectron. Reliab., 2018

2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2013

2009

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.

Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk

Microelectron. Reliab., 2009

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.

Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui

Microelectron. Reliab., 2009

2007

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.

Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua

Microelectron. Reliab., 2007

2006

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.

A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul

Microelectron. Reliab., 2006

2005

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage

Microelectron. Reliab., 2005

2004

Reliability Investigation of Gallium Nitride HEMT.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl

Microelectron. Reliab., 2004

Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET.

A. Sozza, Christian Dua, A. Kerlain, C. Brylinski, Enrico Zanoni

Microelectron. Reliab., 2004

2003

Wide band gap semiconductor reliability : Status and trends.

Sylvain L. Delage, Christian Dua

Microelectron. Reliab., 2003