Chinchun Meng

According to our database, Chinchun Meng authored at least 20 papers between 2005 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Analysis and Design of a High-Coupling-Factor Marchand-Balun Variant Suitable for Standard Silicon IC Process and Its Wide-Band Gilbert Mixer Application.

Chinchun Meng, Sheng-Che Tseng, Tsung-Mao Chao, Kuan-Chang Tsung

IEEE Access, 2024

2020

Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs.

Chinchun Meng, Wei-Ling Chang, Yu-Chih Hsiao, Meng-Che Li, Hsin-Yi Chien, Guo-Wei Huang

Proceedings of the 2020 IEEE Radio and Wireless Symposium, 2020

2019

Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors.

Wei-Ling Chang, Chinchun Meng, Jung-Hung Ni, Kai-Chun Chang, Chih-Kai Chang, Po-Yi Lee, Yen-Lin Huang

IEEE Trans. Circuits Syst. I Regul. Pap., 2019

pHEMT Single-Voltage-Supply Direct-Conversion Receiver With a 3-10 GHz LC Ladder LNA.

Yu-Chih Hsiao, Chinchun Meng, Chia-Ling Wang, Guo-Wei Huang

Proceedings of the IEEE Radio and Wireless Symposium, 2019

2018

2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier.

Jin-Siang Syu, Chinchun Meng, Chun Yang, Guo-Wei Huang

Proceedings of the 2018 IEEE Radio and Wireless Symposium, 2018

2015

30-GHz mHEMT divide-by-three injection-locked frequency divider with Marchand balun.

Wei-Ling Chang, Chinchun Meng, Kuan-Chang Tsung, Guo-Wei Huang

Proceedings of the 2015 IEEE Radio and Wireless Symposium, 2015

2013

A 2.4-GHz Low-Flicker-Noise CMOS Sub-Harmonic Receiver.

Jin-Siang Syu, Chinchun Meng, Chia-Ling Wang

IEEE Trans. Circuits Syst. I Regul. Pap., 2013

2.4-GHz 7.4-mW 300-kHz flicker-noise-corner direct conversion receiver using 0.18 μm CMOS and deep-n-well NPN BJT.

Wei-Ling Chang, Chinchun Meng, Jin-Siang Syu, Chia-Ling Wang, Guo-Wei Huang

Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

2012

High LO-to-RF isolation wideband gilbert upconversion micromixer using a phase-inverter rat-race coupler in 0.35µm SiGe HBT technology.

Jin-Siang Syu, Chinchun Meng, Po-Yi Wu

Proceedings of the 2012 IEEE Radio and Wireless Symposium, 2012

2011

Isolation performance of sub-harmonic Gilbert mixers.

Hung-Ju Wei, Chinchun Meng, Yi-Chen Lin

Proceedings of the International SoC Design Conference, 2011

2009

Analysis and Design of the 0.13- muhboxm CMOS Shunt-Series Series-Shunt Dual-Feedback Amplifier.

Tzung-Han Wu, Jin-Siang Syu, Chinchun Meng

IEEE Trans. Circuits Syst. I Regul. Pap., 2009

2007

A 5.2 GHz 47 dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35 µm SiGe HBT Technology.

Tzung-Han Wu, Chinchun Meng, Tse-Hung Wu, Guo-Wei Huang

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007

10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells.

Tzung-Han Wu, Chinchun Meng

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007

4-GHz Inter-Stage-Matched SiGe HBT LNA with Gain Enhancement and No Noise Figure Degradation.

Chinchun Meng, Jhin-Ci Jhong

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007

2006

5.2/5.7-GHz 48-dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadrupler.

Tzung-Han Wu, Chinchun Meng

IEEE J. Solid State Circuits, 2006

The Port-to-Port Isolation of the Downconversion P-Type Micromixer Using Different N-Well Topologies.

Sheng-Che Tseng, Chinchun Meng, Yang-Han Li, Guo-Wei Huang

IEICE Trans. Electron., 2006

True 50% Duty-Cycle SSH and SHH SiGe BiCMOS Divide-by-3 Prescalers.

Sheng-Che Tseng, Chinchun Meng, Wei-Yu Chen

IEICE Trans. Electron., 2006

The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices.

Chinchun Meng, Jen-Yi Su, Bo-Chen Tsou, Guo-Wei Huang

IEICE Trans. Electron., 2006

2005

A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology.

Tzung-Han Wu, Chinchun Meng, Tse-Hung Wu, Guo-Wei Huang

IEICE Trans. Electron., 2005

Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements.

Chinchun Meng, Bo-Chen Tsou, Sheng-Che Tseng

IEICE Trans. Electron., 2005