Chien-Chin Wang
Affiliations:- National Chi Nan University, Taiwan
According to our database1,
Chien-Chin Wang
authored at least 11 papers
between 2012 and 2017.
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Bibliography
2017
A 90-96 GHz CMOS down-conversion mixer with high conversion gain and excellent LO-RF isolation.
Proceedings of the 2017 IEEE Radio and Wireless Symposium, 2017
2016
A 7.2 mW 74∼82 GHz CMOS low-noise amplifier with 17.3±1.5 dB gain and 7.7±0.3 dB NF for automotive radar systems.
Proceedings of the 2016 IEEE Radio and Wireless Symposium, 2016
A wideband power amplifier with 13.2 dBm Psat and 19.5% PAE for 60∼94 GHz wireless communication systems in 90 nm CMOS.
Proceedings of the 2016 IEEE Radio and Wireless Symposium, 2016
Design and implementation of a high-performance CMOS dual balun for millimeter-wave star mixer and four-way power amplifier.
Proceedings of the 2016 IEEE Radio and Wireless Symposium, 2016
A low power and high conversion gain 94 GHz up-conversion mixer with excellent I/O matching and LO-RF isolation in 90 nm CMOS.
Proceedings of the 2016 IEEE Radio and Wireless Symposium, 2016
2015
A low power and high conversion gain 77∼81 GHz double-balanced up-conversion mixer with excellent LO-RF isolation in 90 nm CMOS.
Proceedings of the 2015 IEEE Radio and Wireless Symposium, 2015
2014
A 12.1 mW 50∼67 GHz up-conversion mixer with 6 dB conversion gain and 30.7 dB LO-RF isolation in 90 nm CMOS.
Proceedings of the 2014 IEEE Radio and Wireless Symposium, 2014
A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology.
Proceedings of the 2014 IEEE Radio and Wireless Symposium, 2014
A 21.1 mW 6.2 dB NF 77∼81 GHz CMOS low-noise amplifier with 13.5±0.5 dB S21 and excellent input and output matching for automotive radars.
Proceedings of the 2014 IEEE Radio and Wireless Symposium, 2014
2012
A 2.87±0.19dB NF 3.1∼10.6GHz ultra-wideband low-noise amplifier using 0.18µm CMOS technology.
Proceedings of the 2012 IEEE Radio and Wireless Symposium, 2012
A low-power 3.2∼9.7GHz ultra-wideband low noise amplifier with excellent stop-band rejection using 0.18µm CMOS technology.
Proceedings of the 2012 IEEE Radio and Wireless Symposium, 2012