Chiara Boffino

According to our database, Chiara Boffino authored at least 6 papers between 2004 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

A read/write front-end for an antifuse One-Time-Programmable memory in High Voltage Silicon-On-Insulator technology.

Martina Arosio, Chiara Boffino, Sergio Morini, Dirk Priefert, Oezguer Albayrak, Viktor Boguszewicz, Andrea Baschirotto

Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019

2007

Staircase-down SET programming approach for phase-change memories.

Ferdinando Bedeschi, Chiara Boffino, Edoardo Bonizzoni, Claudio Resta, Guido Torelli

Microelectron. J., 2007

2006

A low-ripple voltage tripler.

Ferdinando Bedeschi, Chiara Boffino, Edoardo Bonizzoni, Osama Khouri, Giorgio Pollaccia, Claudio Resta, Guido Torelli

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2005

4-Mb MOSFET-selected μtrench phase-change memory experimental chip.

Ferdinando Bedeschi, Roberto Bez, Chiara Boffino, Edoardo Bonizzoni, Egidio Cassiodoro Buda, Giulio Casagrande, Lucio Costa, Marco Ferraro, Roberto Gastaldi, Osama Khouri, Federica Ottogalli, Fabio Pellizzer, Agostino Pirovano, Claudio Resta, Guido Torelli, Marina Tosi

IEEE J. Solid State Circuits, 2005

High-efficiency control structure for CMOS flash memory charge pumps.

Chiara Boffino, Alessandro Cabrini, Osama Khouri, Guido Torelli

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005

2004

4-Mb MOSFET-selected phase-change memory experimental chip.

Ferdinando Bedeschi, Roberto Bez, Chiara Boffino, Edoardo Bonizzoni, Egidio Cassiodoro Buda, Giulio Casagrande, Lucio Costa, Marco Ferraro, Roberto Gastaldi, Osama Khouri, Federica Ottogalli, Fabio Pellizzer, Agostino Pirovano, Claudio Resta, Guido Torelli, Marina Tosi

Proceedings of the 33rd European Solid-State Circuits Conference, 2004