Chi-Chung Kei

According to our database, Chi-Chung Kei authored at least 4 papers between 2016 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel.

Wen-Chia Wu, Terry Y. T. Hung, D. Mahaveer Sathaiya, Edward Chen, Chen-Feng Hsu, Walker Yun, Hsiang-Chi Hu, Bo-Heng Liu, T. Y. Lee, Chi-Chung Kei, Wen-Hao Chang, Jin Cai, W. Jeff, Chung-Cheng Wu, H.-S. Philip Wong, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V).

Yan-Kui Liang, June-Yang Zheng, Yu-Lon Lin, Wei-Li Li, Yu-Cheng Lu, Dong-Ru Hsieh, Li-Chi Peng, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun-Hsiung Lin

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2016

Corrosion and mechanical properties of atomic layer deposited TiO2 coatings on NiTi implants.

Chi-Chung Kei, Yu-Hsuan Yu, Jan Racek, David Vokoun, Lukas Kaderavek

Proceedings of the IEEE International Conference on Industrial Technology, 2016

Platinum growth analysis in atomic layer deposition using in-situ resistance measurement.

Wen-Hao Cho, Chi-Chung Kei, Bo-Heng Liu, Yo-Shane Yu, Fong-Zhi Chen

Proceedings of the IEEE International Instrumentation and Measurement Technology Conference, 2016