Chenyue Ma

According to our database, Chenyue Ma authored at least 13 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2023

Incremental 3-D Global Routing Considering Cell Movement and Complex Routing Constraints.

Peng Zou, Zhijie Cai, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., June, 2023

2022

CNN-inspired analytical global placement for large-scale heterogeneous FPGAs.

Huimin Wang, Xingyu Tong, Chenyue Ma, Runming Shi, Jianli Chen, Kun Wang, Jun Yu, Yao-Wen Chang

Proceedings of the DAC '22: 59th ACM/IEEE Design Automation Conference, San Francisco, California, USA, July 10, 2022

2021

Late Breaking Results: Incremental 3D Global Routing Considering Cell Movement.

Peng Zou, Zhifeng Lin, Chenyue Ma, Jun Yu, Jianli Chen

Proceedings of the 58th ACM/IEEE Design Automation Conference, 2021

CongestNN: An Bi-Directional Congestion Prediction Framework for Large-Scale Heterogeneous FPGAs.

Chenyue Ma, Yifeng Xiao, Sifei Wang, Jun Yu, Jianli Chen

Proceedings of the 14th IEEE International Conference on ASIC, 2021

2017

A universal approach for signal dependent circuit reliability simulation.

Lining Zhang, Chenyue Ma, Mansun Chan

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

Concurrent device/circuit aging for general reliability simulations.

Haoyuan Jiang, Chenyue Ma, Lining Zhang, Mansun Chan

Proceedings of the International Symposium on Integrated Circuits, 2016

2015

Investigation of nitrogen enhanced NBTI effect using the universal prediction model.

Peng Wu, Chenyue Ma, Lining Zhang, Xinnan Lin, Mansun Chan

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.

Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch

IEICE Trans. Electron., 2013

2011

A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection.

Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang

Microelectron. Reliab., 2011

2010

Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device.

Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang

Microelectron. Reliab., 2010

Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits.

Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin

Proceedings of the 11th International Symposium on Quality of Electronic Design (ISQED 2010), 2010

2009

A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.

Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan

Proceedings of the 10th International Symposium on Quality of Electronic Design (ISQED 2009), 2009

2008

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure.

Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang

Proceedings of the 9th International Symposium on Quality of Electronic Design (ISQED 2008), 2008