Chengji Jin

According to our database1, Chengji Jin authored at least 10 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K.
Sci. China Inf. Sci., 2024

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics.
Sci. China Inf. Sci., October, 2023

Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD.
Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors.
Proceedings of the International Conference on IC Design and Technology, 2023

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022
Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling.
Proceedings of the International Conference on IC Design and Technology, 2022

2019
Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017
Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs.
Microelectron. Reliab., 2017


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