Chengji Jin

According to our database, Chengji Jin authored at least 10 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K.

Huan Liu, Qiyu Yang, Chengji Jin, Jiajia Chen, Lulu Chou, Xiao Yu, Yan Liu, Genquan Han

Sci. China Inf. Sci., 2024

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET.

Junru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications.

Xinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics.

Huan Liu, Jiajia Chen, Chengji Jin, Xiao Yu, Yan Liu, Genquan Han

Sci. China Inf. Sci., October, 2023

Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD.

Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen

Proceedings of the IEEE International Conference on Integrated Circuits, 2023

Effect of Mobile Ions on Subthreshold Swing of HfO2-based Ferroelectric Field-Effect Transistors.

Jiajia Chen, Jiani Gu, Zhi Gong, Chengji Jin, Huan Liu, Xiao Yu, Genquan Han

Proceedings of the International Conference on IC Design and Technology, 2023

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology.

Yiqin Zeng, Zhetao Ding, Xueyang Li, Minglei Ma, Yue Peng, Rongzong Shen, Gaobo Lin, Chengji Jin, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling.

Huan Liu, Jiajia Chen, Chengji Jin, Yan Liu, Genquan Han, Xiao Yu

Proceedings of the International Conference on IC Design and Technology, 2022

2019

Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model.

Masaharu Kobayashi, Chengji Jin, Toshiro Hiramoto

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017

Improved analytical model of surface potential with modified boundary conditions for double gate tunnel FETs.

Bin Lu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Xiaoran Cui, Chengji Jin, Chen Liu

Microelectron. Reliab., 2017