Chenghu Dai

According to our database, Chenghu Dai authored at least 15 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbance.

Wenjuan Lu, Chuang Wang, Wei Hu, Chenghu Dai, Chunyu Peng, Zhiting Lin, Xiulong Wu

Microelectron. J., 2025

2024

High-Performance Latch Designs of Double-Node-Upset Self-Recovery and Triple-Node-Upset Tolerance for Aerospace Applications.

Chunyu Peng, Lang Tian, Licai Hao, Qiang Zhao, Chenghu Dai, Zhiting Lin, Xiulong Wu

IEEE Trans. Aerosp. Electron. Syst., October, 2024

Low-Cost and Highly Robust Quadruple Node Upset Tolerant Latch Design.

Licai Hao, Yaling Wang, Yunlong Liu, Shiyu Zhao, Xinyi Zhang, Yang Li, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Yongliang Zhou, Chenghu Dai, Zhiting Lin, Xiulong Wu

IEEE Trans. Very Large Scale Integr. Syst., May, 2024

Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.

Licai Hao, Xinyi Zhang, Chenghu Dai, Qiang Zhao, Wenjuan Lu, Chunyu Peng, Yongliang Zhou, Zhiting Lin, Xiulong Wu

IEEE Trans. Very Large Scale Integr. Syst., April, 2024

Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.

Li Liu, Dele Tai, Bin Qiang, Lijun Guan, Chunyu Peng, Chenghu Dai, Licai Hao, Wenjuan Lu, Zhiting Lin, Qiang Zhao, Xiulong Wu

IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations.

Chenghu Dai, Zihua Ren, Lijun Guan, Haitao Liu, Mengya Gao, Wenjuan Lu, Zhiyong Pang, Chunyu Peng, Xiulong Wu

Microelectron. J., February, 2024

A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.

Yongliang Zhou, Zixuan Zhou, Yiming Wei, Zhen Yang, Xiao Lin, Chenghu Dai, Licai Hao, Chunyu Peng, Hao Cai, Xiulong Wu

IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024

High energy efficient and configurable CIM macro for image processing.

Chunyu Peng, Shengyuan Yan, Huayi Ding, Yana Wang, Wenjuan Lu, Chenghu Dai, Xin Li, Wei Hu, Xiulong Wu

Microelectron. J., 2024

Cross-coupled 4T2R multi-logic in-memory computing circuit design.

Zhiting Lin, Changxin Yue, Ke Li, Qiushi Feng, Siyan Li, Yue Zhao, Yuanyang Wang, Jiaqi Chen, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Chenghu Dai, Licai Hao, Xiulong Wu

Microelectron. J., 2024

A 28-nm 9T SRAM-based CIM macro with capacitance weighting module and redundant array-assisted ADC.

Zhiting Lin, Runru Yu, Da Huo, Qingchuan Zhu, Miao Long, Yongqi Qin, Yanchun Liu, Lintao Chen, Simin Wang, Ting Wang, Yousheng Xing, Zeshi Wen, Yu Liu, Xin Li, Chenghu Dai, Qiang Zhao, Chunyu Peng, Xiulong Wu

Microelectron. J., 2024

Corrigendum to "A 9T-SRAM based computing-in-memory with redundant unit and digital operation for boolean logic and MAC" [145, March 2024, 106124.

Xin Li, Mengya Gao, Zihua Ren, Kefeng Yu, Wenjuan Lu, Chenghu Dai, Wei Hu, Chunyu Peng, Xiulong Wu

Microelectron. J., 2024

A 9T-SRAM based computing-in-memory with redundant unit and digital operation for boolean logic and MAC.

Xin Li, Mengya Gao, Zihua Ren, Kefeng Yu, Wenjuan Lu, Chenghu Dai, Wei Hu, Chunyu Peng, Xiulong Wu

Microelectron. J., 2024

2023

Design of radiation-hardened memory cell by polar design for space applications.

Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

Chenghu Dai, Yuanyuan Du, Qi Shi, Ruixuan Wang, Hao Zheng, Wenjuan Lu, Chunyu Peng, Licai Hao, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Radiation-hardened 14T SRAM cell by polar design for space applications.

Licai Hao, Bin Qiang, Chenghu Dai, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Li Liu, Qiang Zhao, Xiulong Wu, Fei Sun

IEICE Electron. Express, 2023