Chen Sun

According to our database, Chen Sun authored at least 15 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash.

Chao Li, Chen Sun, Jianyi Yang, Kai Ni, Xiao Gong, Cheng Zhuo, Xunzhao Yin

IEEE Trans. Very Large Scale Integr. Syst., August, 2024

Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors.

Gan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

First Demonstration of BEOL-Compatible 3D Vertical FeNOR.

Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing.

Wenjun Tang, Jialong Liu, Chen Sun, Zijie Zheng, Yongpan Liu, Huazhong Yang, Chen Jiang, Kai Ni, Xiao Gong, Xueqing Li

IEEE Trans. Circuits Syst. I Regul. Pap., December, 2023

Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F² High-Density Integration.

Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.

Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.

Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10⁹ Endurance, and 58.3% Area Saving.

Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.

Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.

Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).

Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.

Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong

Proceedings of the International Conference on IC Design and Technology, 2022

2021

First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection.

Jishen Zhang, Haiwen Xu, Gong Zhang, Yue Chen, Haibo Wang, Kian Hua Tan, Satrio Wicaksono, Chao Wang, Chen Sun, Qiwen Kong, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2019

Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET.

Chen Sun, Kaizhen Han, Xiao Gong

Proceedings of the International Conference on IC Design and Technology, 2019