Chen-Hsun Lin

According to our database, Chen-Hsun Lin authored at least 2 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips.

Ping-Chun Wu, Jian-Wei Su, Yen-Lin Chung, Li-Yang Hong, Jin-Sheng Ren, Fu-Chun Chang, Yuan Wu, Ho-Yu Chen, Chen-Hsun Lin, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Shih-Chieh Chang, Wei-Chung Lo, Chih-I Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

IEEE J. Solid State Circuits, July, 2024

2022

A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices.

Ping-Chun Wu, Jian-Wei Su, Yen-Lin Chung, Li-Yang Hong, Jin-Sheng Ren, Fu-Chun Chang, Yuan Wu, Ho-Yu Chen, Chen-Hsun Lin, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Shih-Chieh Chang, Wei-Chung Lo, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chih-I Wu, Meng-Fan Chang

Proceedings of the IEEE International Solid-State Circuits Conference, 2022