Cheikh Diouf

According to our database, Cheikh Diouf authored at least 9 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Non-conducting Hot carrier temperature activation and temperature sense effect.

X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Insight Into HCI Reliability on I/O Nitrided Devices.

C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

HCI Temperature sense effect from 180nm to 28nm nodes.

Xavier Federspiel, Abdourahmane Camara, Audrey Michard, Cheikh Diouf, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Comparison of variability of HCI induced drift for SiON and HKMG devices.

Xavier Federspiel, Cheikh Diouf, Florian Cacho, Emmanuel Vincent

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Process Optimization for HCI Improvement in I/O Analog Devices.

Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement.

Florian Cacho, X. Federspiel, D. Nouguier, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.

M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015