Che-Kai Lin

According to our database, Che-Kai Lin authored at least 7 papers between 2010 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2014

Investigation of high performance Edge Lifted Capacitors reliability for GaAs and GaN MMIC technology.

Ming-Hung Weng, Chao-Hung Chen, Che-Kai Lin, Shih-Hui Huang, Jhih-Han Du, Sheng-Wen Peng, Walter Wohlmuth, Frank Yung-Shi Chou, Chang-Hwang Hua

Microelectron. Reliab., 2014

2012

Investigation on the thermal behavior of 0.15 μm gate-length In_0.4Al_0.6As/In_0.4Ga_0.6As MHEMT.

Che-Kai Lin, Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Feng-Tso Chien

Microelectron. Reliab., 2012

Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.

Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai

Microelectron. Reliab., 2012

2011

High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P₂S₅/(NH₄)₂S_X + UV interface treatment.

Chao-Wei Lin, Hsien-Chin Chiu, Che-Kai Lin, Jeffrey S. Fu

Microelectron. Reliab., 2011

Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.

Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu

Microelectron. Reliab., 2011

High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT.

Hsien-Chin Chiu, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu

Microelectron. Reliab., 2011

2010

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology.

Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu, Hsing-Yuan Tu, Shiang-Feng Tang

Microelectron. Reliab., 2010