Charles Leroux

According to our database, Charles Leroux authored at least 6 papers between 2001 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs.

Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2015

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.

Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond

Proceedings of the 45th European Solid State Device Research Conference, 2015

2007

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.

Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin

Microelectron. Reliab., 2007

Accurate determination of flat band voltage in advanced MOS structure.

Charles Leroux, Gérard Ghibaudo, Gilles Reimbold

Microelectron. Reliab., 2007

2001

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).

Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis

Microelectron. Reliab., 2001