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Chao Yang

Orcid: 0000-0003-0781-7227

Affiliations:
  • University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China


According to our database1, Chao Yang authored at least 3 papers between 2016 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2019
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers.
[BibTeX]
[DOI]
Fu Peng
,
Chao Yang
,
Siyu Deng
,
Dongya Ouyang
,
Bo Zhang
,
Jie Wei
,
Xiaorong Luo
Sci. China Inf. Sci., 2019

2018
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels.
[BibTeX]
[DOI]
Chao Yang
,
Xiaorong Luo
,
Siyu Deng
,
Fu Peng
,
Bo Zhang
Sci. China Inf. Sci., 2018

2016
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer.
[BibTeX]
[DOI]
Jiayun Xiong
,
Chao Yang
,
Jie Wei
,
Junfeng Wu
,
Bo Zhang
,
Xiaorong Luo
Sci. China Inf. Sci., 2016


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