Changnam Park

According to our database, Changnam Park authored at least 7 papers between 2017 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit.

Taejoong Song, Hoonki Kim, Woojin Rim, Hakchul Jung, Changnam Park, Inhak Lee, Sanghoon Baek, Jonghoon Jung

IEEE J. Solid State Circuits, 2022

2021

A Wide-Range Static Current-Free Current Mirror-Based LS With Logic Error Detection for Near-Threshold Operation.

Hanwool Jeong, Tae Hyun Kim, Changnam Park, Hoonki Kim, Taejoong Song, Seong-Ook Jung

IEEE J. Solid State Circuits, 2021

2019

Bitline Charge-Recycling SRAM Write Assist Circuitry for $V_{\mathrm{MIN}}$ Improvement and Energy Saving.

Hanwool Jeong, Se Hyeok Oh, Tae Woo Oh, Hoonki Kim, Changnam Park, Woojin Rim, Taejoong Song, Seong-Ook Jung

IEEE J. Solid State Circuits, 2019

A Voltage and Temperature Tracking SRAM Assist Supporting 740mV Dual-Rail Offset for Low-Power and High-Performance Applications in 7nm EUV FinFET Technology.

Inhak Lee, Hanwool Jeong, Sangyeop Baeck, Siddharth Gupta, Changnam Park, Dongwook Seo, Jaeseung Choi, Jaeyoung Kim, Hoon Kim, Jungmyung Kang, Sunyung Jang, Daeyoung Moon, Sangshin Han, Taehyung Kim, Jaehyun Lim, Younghwan Park, Hyejin Hwang, Jeonseung Kang, Taejoong Song

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

Half-and-Half Compare Content Addressable Memory with Charge-Sharing Based Selective Match-Line Precharge Scheme.

Woong Choi, Jongsun Park, Hoonki Kim, Changnam Park, Taejoong Song

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications.

Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.

Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017