Changhua Tan

According to our database, Changhua Tan authored at least 8 papers between 2001 and 2006.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2006

Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes.

Yao Zhao, Mingzhen Xu, Changhua Tan

Microelectron. Reliab., 2006

2002

Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction.

Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Microelectron. Reliab., 2002

The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures.

Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu

Microelectron. Reliab., 2002

Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931].

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Microelectron. Reliab., 2002

2001

A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V_g=V_d.

Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Microelectron. Reliab., 2001

Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions.

Fuchen Mu, Changhua Tan, Mingzhen Xu

Microelectron. Reliab., 2001

Effect of SiO₂/Si interface roughness on gate current.

Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan

Microelectron. Reliab., 2001

The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures.

Lingfeng Mao, Changhua Tan, Mingzhen Xu

Microelectron. Reliab., 2001