Chang Kwon Lee

According to our database, Chang Kwon Lee authored at least 4 papers between 2020 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization.

Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023

A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization.

Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho, Ji Hwan Park, Junil Moon, Sung-Hak Lee, Tae-Kyun Kim, Sanghoon Oh, Seokwoo Choi, Yongsuk Choi, Ho Sung Cho, Tae-Sik Yun, Young Jun Koo, Jae-Seung Lee, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Kyo Yun Lee, Sang-Hoon Lee, Woo Sung We, Seungchan Kim, Seung Min Yang, Keonho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Seonyeol Kim, Dong-Yeol Lee, Su-Hyun Oh, Junghyun Shin, Yeonho Lee, Jieun Jang, Joohwan Cho

IEEE J. Solid State Circuits, 2023

2022

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization.

Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2020

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.

Dong-Uk Lee, Ho Sung Cho, Jihwan Kim, Young Jun Ku, Sangmuk Oh, Chul Dae Kim, Hyun Woo Kim, Wooyoung Lee, Tae-Kyun Kim, Tae Sik Yun, Min Jeong Kim, SeungGyeon Lim, Seong Hee Lee, Byung Kuk Yun, Jun Il Moon, Ji Hwan Park, Seokwoo Choi, Young Jun Park, Chang Kwon Lee, Chunseok Jeong, Jae-Seung Lee, Sang Hun Lee, Woo Sung We, Jong Chan Yun, Doobock Lee, Junghyun Shin, Seungchan Kim, Junghwan Lee, Jiho Choi, Yucheon Ju, Myeong-Jae Park, Kang Seol Lee, Youngdo Hur, Daeyong Shim, Sangkwon Lee, Junhyun Chun, Kyowon Jin

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020