Chang-Feng Yang

According to our database, Chang-Feng Yang authored at least 2 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2024

15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm² Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C.

Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022

Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures.

Chang-Feng Yang, Chun-Yu Wu, Meng-Chun Shih, Ming-Ta Yang, Ming-Han Yang, Yu-Tien Wu, Ta-Chun Chien, Chih-Wei Lai, Shih-Chi Tsai, Wen-Ting Chu, Arthur Hung

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022