Chandrasekharan Kothandaraman

According to our database, Chandrasekharan Kothandaraman authored at least 4 papers between 2007 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Low-current Spin Transfer Torque MRAM.

Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, Anthony J. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge

Proceedings of the 2017 International Symposium on VLSI Design, Automation and Test, 2017

2015

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications.

Chandrasekharan Kothandaraman, X. Chen, Dan Moy, Dallas Lea, Sami Rosenblatt, Faraz Khan, Derek Leu, Toshiaki Kirihata, D. Ioannou, Giuseppe La Rosa, Jeffrey B. Johnson, Norman Robson, Subramanian S. Iyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Impact of 3D copper TSV integration on 32SOI FEOL and BEOL reliability.

Mukta G. Farooq, Giuseppe La Rosa, Fen Chen, Prakash Periasamy, Troy L. Graves-abe, Chandrasekharan Kothandaraman, C. Collins, W. Landers, J. Oakley, J. Liu, John Safran, S. Ghosh, S. Mittl, D. Ioannou, Carole Graas, Daniel Berger, Subramanian S. Iyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2007

Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips.

Norman Robson, John Safran, Chandrasekharan Kothandaraman, Alberto Cestero, Xiang Chen, Raj Rajeevakumar, Alan Leslie, Dan Moy, Toshiaki Kirihata, Subramanian S. Iyer

Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007