Chadwin D. Young

According to our database, Chadwin D. Young authored at least 12 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation.

Rodolfo A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, Robert C. Baumann, B. Gnade, Manuel Quevedo-Lopez, Chadwin D. Young

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2020

Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3.

Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Massimo Catalano, Manuel Quevedo-Lopez, Chadwin D. Young

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric.

Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Electrical characterization of process induced effects on non-silicon devices.

Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017

Advances of the development of a ferroelectric field-effect transistor on Ge(001).

Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs.

Nebojsa D. Jankovic, Chadwin D. Young

Microelectron. Reliab., 2016

2015

Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon.

Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain

IEEE Trans. Reliab., 2015

2009

Temperature dependent time-to-breakdown (T_BD) of TiN/HfO₂ n-channel MOS devices in inversion.

N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra

Microelectron. Reliab., 2009

2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis

Microelectron. Reliab., 2008

2007

Electrical characterization and analysis techniques for the high-kappa era.

Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker

Microelectron. Reliab., 2007

2005

Probing stress effects in HfO₂ gate stacks with time dependent measurements.

Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff

Microelectron. Reliab., 2005

2004

Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics.

Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto

Microelectron. Reliab., 2004