Catherine Carabasse

According to our database, Catherine Carabasse authored at least 12 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays.

J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations.

Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2024

2023

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation.

Joel Minguet Lopez, Manon Dampfhoffer, Tifenn Hirtzlin, Lucas Reganaz, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Thomas Magis, Catherine Carabasse, Niccolo Castellani, Valentina Meli, Elisa Vianello, Damien Deleruyelle, Jean-Michel Portal, Gabriel Molas, François Andrieu

Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).

Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes.

J. Laguerre, Marc Bocquet, Olivier Billoint, Simon Martin, Jean Coignus, Catherine Carabasse, Thomas Magis, T. Dewolf, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2023

2022

1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing.

Joel Minguet Lopez, François Rummens, Lucas Reganaz, A. Heraud, Tifenn Hirtzlin, Laurent Grenouillet, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Niccolo Castellani, Valentina Meli, S. Martin, Thomas Magis, Elisa Vianello, C. Sabbione, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Gabriel Molas, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements.

Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, François Aussenac, François Andrieu, François Triozon, Laurent Grenouillet

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization.

Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Damien Deleruyelle, Niccolo Castellani, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays.

Joel Minguet Lopez, Niccolo Castellani, Laurent Grenouillet, Lucas Reganaz, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Thomas Magis, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas

Proceedings of the IEEE International Memory Workshop, 2021

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2013

A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications.

Giorgio Palma, Elisa Vianello, Olivier Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, Catherine Carabasse, Gabriel Molas, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories.

Elisa Vianello, Carlo Cagli, Gabriel Molas, Emeline Souchier, Philippe Blaise, Catherine Carabasse, G. Rodriguez, V. Jousseaume, Barbara De Salvo, Florian Longnos, Faiz Dahmani, P. Verrier, D. Bretegnier, J. Liebault

Proceedings of the 2012 European Solid-State Device Research Conference, 2012